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| Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES CORPORATION * High Input Impedance * Diode Protected Gate PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TO-72 C,B S G D 1503Z DEVICE SCHEMATIC 1 ORDERING INFORMATION Part 3N172-73 X3N172-73 2 Package Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC 3 4 0200 ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL IGSS BVGSS BVDSS BVSDS VGS(th) VGS IDSS ISDS rDS(on) ID(on) PARAMETER Gate Reverse Current Gate Breakdown Voltage Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Threshold Voltage Gate Source Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Source Current Drain Source On Resistance On Drain Current -5.0 -40 -40 -40 -2.0 -2.0 -3.0 -5.0 -5.0 -6.5 -0.4 -0.4 250 -30 -5.0 3N172 MIN MAX -200 -0.5 -125 -30 -30 -30 -2.0 -2.0 -2.5 -5.0 -5.0 -6.5 -10 -10 350 -30 nA ohms mA V 3N173 MIN MAX -500 -1.0 -125 UNITS pA A ID = -10A ID = -10A IS = -10A, VDB = 0 VDS = VGS, I D = -10A VDS = -15V, ID = -10A VDS = -15V, ID = -500A VDS = -15V, VGS = 0 VSD = -15V, VDB = 0, VGD = 0 VGS = -20V, ID = -100A V DS = -15V, VGS = -10V TEST CONDITIONS VGS = -20V TA = +125oC 3N172 / 3N173 CORPORATION SMALL-SIGNAL ELECTRICAL CHARACTERISTICS TA = 25oC and Bulk (substrate) Lead Connected to Source SYMBOL | yfs | | yos | Ciss Crss Coss PARAMETER Magnitude of Small-Signal, Common-Source, Short-Circuit, Forward Transadmittance* Magnitude of Small-Signal, Common-Source, Short-Circuit, Output Admittance* Small-Signal, Common-Source, Short-Circuit, Input Capacitance* Small-Signal, Common-Source, Short-Circuit, Reverse Transfer Capacitance* Small-Signal, Common-Source, Short-Circuit, Output Capacitance* 3N172 3N173 MIN MAX MIN MAX 1500 4000 1000 4000 250 3.5 1.0 3.0 250 3.5 1.0 3.0 UNITS S S pF pF pF TEST CONDITIONS VDS = -15V, ID = -10mA, f = 1kHz VDS = -15V, ID = -10mA, f = 1kHz VDS = -15V, ID = -10mA, f = 1MHz VDS = -15V, ID = -10mA, f = 1MHz VDS = -15V, ID = -10mA, f = 1MHz NOISE CHARACTERISTICS SYMBOL NF PARAMETER Common-Source Spot Noise Figure o TYPICAL 1.0 UNITS dB TEST CONDITIONS VDS = -15V, ID = -1mA, f = 1kHz, RG = 1M SWITCHING CHARACTERISTICS TA = 25 C Bulk (substrate) Lead Connected to Source SYMBOL td (on) tr toff PARAMETER Turn-On Delay Time* Rise Time* Turn-Off Delay Time* 3N172 MIN MAX 12 24 50 3N173 MIN MAX 12 24 50 ns VDD = -15V, ID (on) = -10mA RG = RL = 1.4k See Test Circuit Below UNITS TEST CONDITIONS *Registered JEDEC Data SWITCHING TIME DETAIL VDD RL MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH t rise < 0.2ns Cin < 2.0pF Rin > 10M INPUT PULSE t rise < 2ns PULSE WIDTH > 200ns PULSE WIDTH 10% VIN 50% -VIN t off -1V 10% VOUT 90% 90% -15V 0210 1.0 -0.1 -0.5 -1.0 1000 RG VIN 50 VOUT D.U.T. 0220 SWITCHING TIMES vs. ON-STATE DRAIN CURRENT -0V 50% 90% 500 VDD = 15V SWITCHING TIS - nSEC RG = R L = 1.4K 100 tr t 4(on) 50 t off t rise 10 5.0 t d(on) -5.0 -10 ON-STATE DRAIN CURRENT - (I D(on) ) - mA 0230 This datasheet has been download from: www..com Datasheets for electronics components. |
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